With the rapid development of the semiconductor industry， semiconductor chips are advancing toward miniaturization and high integration， giving rise to system-in-package （SiP） technology. The 5V ferroelectric memory chip based on system-in-package technology， the primary component is a 3.3V-powered ferroelectric memory， whose power supply range has been expanded to 5V without altering its core functionality， enabling compatibility with a broader range of hardware systems. This approach resolves the power supply mismatch issue in memory applications， simplifies FeRAM peripheral circuit design， and enhances ease of use. The specific design covers system analysis and design selection， focusing on known-good-die stacking， package interconnect design， and substrate design， providing a detailed overview of the FeRAM5V_SiP design process. Additionally， simulations and analyses of signal integrity， power integrity， and thermal stress are conducted using Sigrity and Flotherm software. These analyses confirm the design’s feasibility and robustness. Compared to traditional PCBs， the FeRAM5V_SiP achieves a smaller size and higher integration at the same performance level， meeting market demands and providing a viable reference for the design of similar SiP chips.

In radio multipath propagation environments， periodic variations in signal intensity can overlap with multipath effect fluctuations， making it difficult for direction-finding and positioning systems to distinguish between normal multipath phenomena and signal source location changes. This often leads to the generation of false information and suboptimal data mining outcomes. To address this issue， this paper proposes a radio monitoring data mining method based on fuzzy C-means clustering. First， wavelet transform is employed to decompose radio signals， and a ridge detection algorithm is used to extract instantaneous frequency features. Subsequently， the fuzzy C-means clustering algorithm is applied to perform preliminary clustering of the instantaneous frequency features， and the clustering results are optimized by incorporating spatial neighborhood information. Finally， the anomaly factor of each cluster is calculated to identify abnormal data points， thereby achieving effective information mining. Experimental results demonstrate that the proposed method significantly enhances data mining speed， resource utilization rate， and coverage rate across multiple experimental scenarios， indicating its practical effectiveness.

In order to reduce the problem of traditional evaluation methods being difficult to provide accurate feedback due to the diversity of students' self-directed learning behaviors and differences in technology platforms in online teaching， the LMBP （Levenberg Marquardt Back Propagation） algorithm is introduced to construct an automatic evaluation model that can quantitatively analyze students' learning performance using weighted evaluation indicators. Determine the weight of evaluation indicators for online teaching and learning， screen out key evaluation indicators， and allocate weight values reasonably to reduce data disorder. Based on the LMBP algorithm， an automatic evaluation model is constructed to automatically calculate the online learning evaluation score of each student through the operation of the model， reducing the lag of evaluation and achieving objective and accurate evaluation. The experimental results show that the weight values of various indicators calculated by the model are above 0.96， the fitting degree is higher than 0.98， and the evaluation score is higher than 97 points， which can achieve effective evaluation of online teaching.

Aiming at the slow speed of traditional comparators， a high-speed comparator with optional speed is proposed. The comparator applies a rail to rail input structure. The pre-amplification circuit of the high-speed comparator is composed of a two-stage differential amplifier， and the result of the amplifier is fed into a latch circuit to get the comparison result. The latch circuit reduces the comparator delay and increases the comparator speed . In the comparator circuit， a comparator reverse input mode selection circuit， a comparator speed mode selection circuit， a comparator output stage selection circuit， and a comparator lag terminal selection circuit are added. The reverse input of the comparator has eight selection modes， the speed of the comparator has four selection modes， and the lag end of the comparator has four selection modes. The rail-to-rail input structure of the comparator circuit can detect differential mode voltage of 2mV. A multifunctional comparator with rail to rail， optional speed and optional hysteresis end is realized.

Repeated positioning accuracy is an important performance index of some moving object，which is relatively simple measuring method is to use a ruler or tape measure to measure directly and manually，which is difficult to ensure measurement accuracy，and the measurement efficiency is lower，the consistency of multiple measurements is not good，but the cost is lower。Another measurement method is to use an expensive coordinate measuring instrument，the accuracy of this measurement method is very high，and the consistency of repeated measurement is good，but the cost is very high。According to the advantages and disadvantages of the above two measurement methods，the motion model of the object is establish at first，then the mathematical model which is easy to understand and realize is abstracted from the motion model，finally，based on the mathematical model，by means of electronic technology，the displacement laser sensor is selected as the measurement distance means，and the repeated positioning accuracy detection system is designed。This system is simple to operate and the measurement accuracy is higher and has a low cost。

The power consumption of successive approximation analog-to-digital converter （SAR ADC） is mainly derived from three modules： DAC， comparator and SAR logic. Among them， the energy consumed by DAC capacitor array during charge and discharge is an important factor affecting the overall power consumption of SAR ADC. Therefore， the design of low-power capacitor switch procedure is particularly critical. Traditional V_CM-based capacitor switch procedure is widely used in the design of SAR ADC capacitor switching schemes due to its relatively simple working principle and implementation mode. However， when the comparator results are opposite， the power consumption of switching will increase significantly. To solve this problem， this paper proposes a segmented capacitor split V_CM-based capacitor switch procedure， which can effectively reduce the power consumption of the capacitor switch， and designs a 12-bit 10MS/s low-power SAR ADC based on 65nm LP CMOS technology.

High-voltage SOI LDMOS devices are widely used in many applications， including consumer electronics and industrial control systems， due to their high level of integration and low power consumption. This paper presents the design and optimization of thick-gate-oxygen SOI PLDMOS devices and thin-gate-oxygen SOI NLDMOS devices， which are the key components of the high-voltage integrated driver circuits. Simulations are performed using TCAD simulation software Medici to optimize the drift region and trap region doping dose and the drift region length， so as to increase the breakdown voltage of the devices， reduce the specific on-resistance， and obtain the appropriate threshold voltage and open-state breakdown voltage values. The optimized thick-gate oxygen SOI PLDMOS device has a breakdown voltage of -235.7 V， a specific on-resistance of 19.6 mΩ·cm²， a threshold voltage of -36.7 V， and an open-state breakdown voltage of -250 V. The thin-gate oxygen SOI NLDMOS device has a breakdown voltage of 276.7 V， a specific on-resistance of 11.5 mΩ·cm²， a threshold voltage of 1.9 V， and an open-state breakdown voltage of 119 V.

With the rapid development of memory technology， the operating voltage of double data rate synchronous dynamic random memory （DDR） is getting lower and lower. In order to meet the power supply requirements of DDR， a linear regulator with both source and sink current capabilities has been designed， which is compatible with DDR1~DDR4 power supply systems and other power supply system requirements. This chip utilizes the characteristics of dual power supply voltage to reduce static power consumption. The input voltage range of the power supply is 2.5V to 3.3V， and the LDO power supply voltage is adjustable from 1.2V to 2.5V according to the power supply requirements of DDR1~DDR4. This design uses a dual-loop regulator to achieve source and sink currents， and the output voltage is adjustable externally by the application. A low-threshold NMOS push-pull output stage is used to achieve an output voltage of 0.6V， and a GM amplifier is added to support fast transient response. The chip was designed using a 0.35um BCD process，the regulator was simulated under different DDR power supply conditions. The output could follow the input. The static current at no load is approximately 440uA to 700uA. The transient response and stability were simulated under the DDR4 power supply condition. When the load current jumped from 0A to 3A， the output voltage fluctuation is about 50mV. The results show that the circuit meets the application requirements of DDR1 to DDR4.

Based on the CSMC 0.18μm CMOS process， a high-precision RC oscillator is designed， and the temperature compensation technology is carried out by pulse density modulation and sigma-delta modulation technology， which improves the temperature stability of the output frequency. The low-leakage switching capacitor resistor and temperature compensation resistor circuit are designed by using the frequency-locked loop architecture， and the temperature compensation of the resistance is carried out by three-point digital trimming technology. In addition， the integrator circuit uses a chopping technique to suppress the influence of offset voltage on the output frequency accuracy， and the voltage controlled oscillator uses a low temperature coefficient resistor to further improve the temperature stability. The simulation results show that the output frequency of the oscillator can be stabilized at 32MHz at different process angles， the output frequency change rate is less than 0.45% in the temperature range of -40~125°C， and the output frequency change rate is less than 0.25% in the range of 1.6~2V power supply voltage， and the power consumption of the whole system is 89.7μW. Compared with other RC oscillators of the same type， this design combines the advantages of high-frequency output， high accuracy， and low power consumption， and can be used as an on-chip clock reference.

At present， three phase MOSFET driver system is widely used in the field of new energy vehicle， industrial robot， and smart home equipment. Based on the requirements of high integration and three phase DC motor driver in the equipment systems， a three phase driver circuit with adjustable PWM duty cycle is designed. The circuit designed by commercial 0.25μm high voltage BCD technology， and the PWM duty cycle can be adjusted from 0% to 100% through the SPEED port voltage. When the ambient temperature reaches 165.1℃， the over temperature protection can be triggered. The chip is equipped with built-in PWM modulation module， charge pump circuit， bootstrap monitoring module， over temperature protection module and so on， ensuring the reliability of the circuit in the whole system. The simulation results show that the three phase driver circuit with adjustable duty cycle meets the design requirements.