Study of Bi-directional highly integrated transistors based on ccomplementary foped source/drain

ZHANG Zhongshan, JIN Xiaoshi

MICROPROCESSORS ›› 2025, Vol. 46 ›› Issue (6) : 7-11.

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MICROPROCESSORS ›› 2025, Vol. 46 ›› Issue (6) : 7-11. DOI: 10.3969/j.issn.1002-2279.2025.06.002

Study of Bi-directional highly integrated transistors based on ccomplementary foped source/drain

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2025, 46(6): 7-11 https://doi.org/10.3969/j.issn.1002-2279.2025.06.002

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